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US5U1_1 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+SBD MOSFET | |||
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Transistors
2.5V Drive Nch+SBD MOSFET
US5U1
US5U1
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
zDimensions (Unit : mm)
TUMT5
2.0
1.3
0.65 0.65
(5) (4)
(1) (2) (3)
0.3
0.85Max.
0.77
0~0.1
0.17
Abbreviated symbol : U01
zApplications
Switching
zPackage specifications
Type
US5U1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Channel temperature
Tch
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
â1 60Hz 1cycle
â2 Mounted on ceramic board
Symbol
VRM
VR
IF
IFSM â1
PD â2
Tj
Limits
30
12
±1.5
±6.0
0.75
6.0
0.7
150
Limits
30
20
0.5
2.0
0.5
150
zInner circuit
(5)
(4)
â2
â1
(1)
(2)
â1 ESD protection diode
â2 Body diode
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
Unit
V
V
A
A
A
A
W / ELEMENT
°C
Unit
V
V
A
A
W / ELEMENT
°C
Rev.A
1/3
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