US5U1_07 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+SBD MOSFET

Transistors
2.5V Drive Nch+SBD MOSFET
US5U1
US5U1
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
zDimensions (Unit : mm)
TUMT5
2.0
1.3
Abbreviated symbol : U01
zApplications
Switching
zPackage specifications
Type
US5U1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Channel temperature
Tch
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Symbol
VRM
VR
IF
IFSM ^∗1
PD ^∗2
Tj
Limits
30
12
±1.5
±6.0
0.75
6.0
0.7
150
Limits
30
20
0.5
2.0
0.5
150
zInner circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
Unit
V
V
A
A
A
A
W / ELEMENT
°C
Unit
V
V
A
A
W / ELEMENT
°C
Rev.B
1/3