UMX21N Datasheet, PDF (1/3 Pages) Rohm – High transition frequency (dual transistors)

Transistors
UMX21N
High transition frequency (dual transistors)
UMX21N
zFeatures
1) Two 2SC4713K chips in a UMT package.
2) Very low output-on resistance. (Ron)
3) Low capacitance.
zEquivalent circuits
UMX21N
(3) (2) (1)
Tr2
Tr1
(4)
(5) (6)
zExternal dimensions (Unit : mm)
UMX21N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ 120mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
12
6
3
50
150
150
−55 to +150
Unit
V
V
V
mA
mW
∗
°C
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
UMX21N
UMT6
X21
TR
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Ron
Min.
Typ.
Max.
Unit
Conditions
12
−
−
V
IC=10µA
6
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA VCB=10V
−
−
0.5
µA VEB=2V
−
−
0.3
V
IC/IB=10mA/1mA
270
−
560
−
VCE/IC=5V/10mA
300
800
−
MHz VCE=5V, IE= −10mA, f=200MHz
−
1
1.7
pF VCB=10V, IE=0A, f=1MHz
−
2
−
Ω IB=3mA, VI=100mVrms, f=500kHz
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