UMT4401 Datasheet, PDF (1/3 Pages) Rohm – NPN Medium Power Transistor

Transistors
UMT4401 / SST4401 / MMST4401 / 2N4401
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!Features
1) BVCEO>40V (IC=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
!Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
-
T93
3000
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
0.6
A
UMT4401
Collector power SST4401
dissipation
MMST4401
PC
0.2
W
2N4401
Junction temperature
0.625
Tj
150
˚C
Storage temperature
Tstg
-55~+150
˚C
!External dimensions (Units : mm)
UMT4401
ROHM : UMT3
EIAJ : SC-70
SST4401
ROHM : SST3
MMST4401
ROHM : SMT3
EIAJ : SC-59
2N4401
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
(3)
0.3+_−00.1
0.15±0.05
All terminals have the same
dimensions
0~0.1
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
0~0.1
(3)
All terminals have the same
dimensions
0.4
+0.1
−0.05
0.15
+0.1
−0.06
0.2Min.
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1+_−00..12
0.8±0.1
0~0.1
(3)
All terminals have the same
dimensions
0.4_−^+00..015
0.15_−^+00..016
4.8±0.2
3.7±0.2
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
0.5±0.1.
(1) (2) (3) _{2.5 −}+00..31
5
0.45±0.1
2.3
(1) Emitter
(2) Base
(3) Collector
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
-
-
-
-
-
-
20
40
80
100
40
250
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.4
0.75
0.95
1.2
-
-
-
300
-
-
6.5
30
15
20
225
30
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=35V
VEB=5V
IC/IB=150mA/15mA
IC/IB=500mA/50mA
IC/IB=150mA/15mA
IC/IB=500mA/50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IE=-20mA, f=100MHz
VCB=10V, f=100kHz
VEB=0.5V, f=100kHz
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA