UMT3906T106 Datasheet, PDF (1/6 Pages) Rohm – PNP General Purpose Transistor

Transistors
UMT3906/SST3906/MMST3906
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
zFeatures
1) BV_CEO > −40V (I_C= −1mA)
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
zPackage, marking, and packaging specifications
Type
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT3906
UMT3
R2A
T106
3000
SST3906 MMST3906
SST3
SMT3
R2A
R2A
T116
T146
3000
3000
zDimensions (Unit : mm)
UMT3906
ROHM : UMT3
EIAJ : SC-70
SST3906
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IO
UMT3906
Collector Power _{SST3906,MMST3906}
dissipation
Pd
SST3906,MMST3906
Junction temperature
Tj
Storage temperature
∗ When mounted on a 7⁺ 5⁺ 0.6mm ceramic board.
Tstg
Limits
−40
−40
−5
−0.2
6.2
0.35
150
−55 to +150
Unit
V
V
V
A
W
W^∗
°C
°C
MMST3906
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
−40
−40
−5
−
−
−
−
−0.65
−
60
80
100
60
30
250
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−50
−50
−0.25
−0.4
−0.85
−0.95
−
−
300
−
−
−
4.5
10
35
35
225
75
Unit
V
V
V
nA
nA
V
V
−
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC= −10µA
IC= −1mA
IE= −10µA
VCB= −30V
VEB= −3V
IC/IB= −10mA/ −1mA
IC/IB= −50mA/ −5mA
IC/IB= −10mA/ −1mA
IC/IB= −50mA/ −5mA
VCE= −1V, IC= −0.1mA
VCE= −1V, IC= −1mA
VCE= −1V, IC= −10mA
VCE= −1V, IC= −50mA
VCE= −1V, IC= −100mA
VCE= −20V, IE=10mA, f=100MHz
VCB= −10V, f=100kHz, IE=0A
VCB= −0.5V, f=100kHz, IC=0A
VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA
VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA
VCC= −3V, IC= −10mA, IB1= −IB2= −1mA
VCC= −3V, IC= −10mA, IB1= −IB2= −1mA
Rev.B
1/4