UMT2907A_1 Datasheet, PDF (1/5 Pages) Rohm – PNP Medium Power Transistor

Transistors
UMT2907A / SST2907A / MMST2907A
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A
zFeatures
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A.
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2907A SST2907A MMST2907A
UMT3
SST3
SMT3
R2F
R2F
R2F
T106
T116
T146
3000
3000
3000
zDimensions (Unit : mm)
UMT2907A
ROHM : UMT3
EIAJ : SC-70
SST2907A
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
UMT2907A,
Collector power
dissipation
SST2907A,
MMST2907A
SST2907A
Junction temperature
Storage temperature
∗ Mounted on a 7 x 5 x 0.6mm ceramic substrate.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−60
−60
−5
−0.6
0.2
0.35
150
−55 to +150
Unit
V
V
V
A
W
W^∗
°C
°C
ROHM : SST3
MMST2907A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Collector-base breakdown voltage
BVCBO
−60
Collector-emitter breakdown voltage
BVCEO
−60
Emitter-base breakdown voltage
BVEBO
−5
Collector cutoff current
ICBO
−
ICES
−
Emitter cutoff current
IEBO
−
−
Collector-emitter saturation voltage
VCE(sat)
−
Base-emitter saturation voltage
−
VBE(sat)
−
75
100
DC current transfer ratio
hFE
100
100
Transition frequency
Collector output capacitance
Emitter input capacitance
50
fT
200
Cob
−
Cib
−
Turn-on time
Delay time
ton
−
td
−
Rise time
tr
−
Turn-off time
toff
−
Storage time
tstg
−
Fall time
tf
−
ROHM : SMT3
EIAJ : SC-59
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−100
−100
−100
−0.4
−1.6
−1.3
−2.6
−
−
−
300
−
−
8
30
50
10
40
100
80
30
Unit
V
V
V
nA
nA
V
V
−
MHz
pF
pF
ns
ns
ns
ns
ns
ns
Conditions
IC= −10µA
IC= −10mA
IE= −10µA
VCB= −50V
VCB= −30V
VEB= −3V
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
VCE= −10V, IC= −0.1mA
VCE= −10V, IC= −1mA
VCE= −10V, IC= −10mA
VCE= −10V, IC= −150mA
VCE= −10V, IC= −500mA
VCE= −20V, IE=50mA, f=100MHz
VCB= −10V, f=100kHz
VEB= −2V, f=100kHz
VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA
VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA
VCC= −30V, VBE(OFF)= −1.5V, IC=− 150mA, IB1= −15mA
VCC= −30V, IC= −150mA, IB1=IB2= −15mA
VCC= −30V , IC= −150mA, IB1=IB2= −15mA
VCC= −30V, IC= −150mA, IB1=IB2= −15mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Rev.B
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