UMN10NTR Datasheet, PDF (1/3 Pages) Rohm – Switching Diode

Switching Diode
UMN10N
Data Sheet
lApplications
Ultra high speed switching
lFeatures
1) Small mold type. (UMD6)
2) High reliability.
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
22..000±00..210
0..2205±^00....101005_{5 E}^各_ac^リ_{h同ーl寸e}^ド_a法d^と_ha^も_{s same dimension}
(6)
(5)
(4)
0.15±0.05
(1)
(2)
(3)
0.65
0.65
1.3±0.1
0～0.1
0.7
0.9±0.1
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
lTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ 1.5±0.1
　　　　　 0
lLand size figure (Unit : mm)
0.65 0.65
0.35
UMD6
lStructure
0.3±0.1
2.2±0.1
4.0±0.1
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current repetitive peak (Single)
Average rectified forward current (single)
V_RM
V_R
I_FM
Io
Surge current (t=1us)
Power dissipation
I_surge
Pd
Junction temperature
Tj
Storage temperature
Tstg
Limits
80
80
300
100
4
200
150
-55 to +150
φ 1.1±0.1
Unit
V
V
mA
mA
A
mW
°C
°C
1.15±0.1
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
I_R
-
Capacitance between terminals
Ct
-
Reverse recovery time
trr
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
Conditions
V
I_F=100mA
μA
V_R=70V
pF
V_R=6V , f=1MHz
ns
V_R=6V , IF=5mA , RL=50W
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2014.09 - Rev.B