UMH8N Datasheet, PDF (1/3 Pages) Rohm – General purpose (dual digital transistors)

Transistors
UMH8N / IMH8A
General purpose (dual digital transistors)
UMH8N / IMH8A
zFeatures
1) Two DTC114T chips in a EMT or UMT or SMT
package.
zExternal dimensions (Unit : mm)
UMH8N
zEquivalent circuits
UMH8N
(3) (2)
(1)
IMH8A
(4) (5)
(6)
R1
R1
R1
(4) (5) (6)
R1=10kΩ
R1
(3) (2) (1)
R1=10kΩ
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
UMH8N
UMT6
H8
TR
3000
IMH8A
SMT6
H8
T108
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
UMH8N
IMH8A
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
50
50
5
100
150(TOTAL)
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
IMH8A
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
Min.
Typ.
Max.
Unit
Conditions
50
−
−
V
IC=50µA
50
−
−
V
IC=1mA
5
−
−
V
IE=50µA
−
−
0.5
µA VCB=50V
−
−
0.5
µA VEB=4V
−
−
0.3
V
IC/IB=10mA/1mA
100
250
600
−
VCE=5V, IC=1mA
−
250
−
MHz VCE=10V, IE= −5mA, f=100MHz ∗
7
10
13
kΩ
−
Rev.A
1/2