UMH1NTN Datasheet, PDF (1/3 Pages) Rohm – General purpose (dual digital transistors)

General purpose (dual digital transistors)
EMH10 / UMH10N
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
Dimensions (Unit : mm)
EMH10
Features
1) Two DTC123J chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Packaging specifications
Package
Code
Type
EMH10
Basic ordering unit (pieces)
UMH10N
Taping
T2R
TN
8000
3000
−
−
ROHM : EMT6
UMH10N
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
Each lead has same dimensions
Abbreviated symbol : H10
1.25
2.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO
IC (Max.)
Power
dissipation
EMH10,UMH10N
Pd
Junction temperature
Tj
Storage temperature
∗ 120mW per element must not be exceeded.
Tstg
Limits
50
12
−5
100
100
150 (TOTAL)
150
−55~+150
Unit
V
V
mA
mA
∗
mW
°C
°C
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
Abbreviated symbol : H10
Equivalent circuit
EMH10 / UMH10N
(3) (2) (1)
R1 R2
DTr2
DTr1
R2 R1
(4) (5) (6)
R1=2.2kΩ
R2=47kΩ
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI (off)
−
−
0.5
VCC=5V, IO=100μA
V
VI (on)
1.1
−
−
VO=0.3V, IO=5mA
Output voltage
VO (on)
−
0.1 0.3
V IO/II=5mA/0.25mA
Input current
II
−
−
3.6 mA VI=5V
Output current
IO (off)
−
−
0.5
μA VCC=50V, VI=0V
DC current gain
GI
80
−
−
− VO=5V, IO=10mA
Transition frequency
fT
−
250
−
MHz VCE=10V, IE= −5mA, f=100MHz
∗
Input resistance
R1
1.54 2.2 2.86 kΩ
−
Resistance ratio
R2/R1
17
21
26
−
−
∗ Transition frequency of the device
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2012.05 - Rev.B