UMH14N Datasheet, PDF (1/3 Pages) Rohm – General purpose (dual digital transistors)

Transistors
UMH14N / IMH14A
General purpose (dual digital transistors)
UMH14N / IMH14A
zFeatures
1) Two DTC144T chips in a UMT or SMT package.
zEquivalent circuit
UMH14N
(3) (2)
(1)
IMH14A
(4) (5)
(6)
R1
R1
R1
(4) (5) (6)
R1
(3) (2) (1)
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
UMH14N
UMT6
H14
TR
3000
IMH14A
SMT6
H14
T108
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation ^UMH14N
Pc
150(TOTAL)
mW
IMH14A
300(TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
zExternal dimensions (Unit : mm)
UMH14N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
IMH14A
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
Min.
50
50
5
−
−
−
100
−
32.9
Typ.
−
−
−
−
−
−
250
250
47
Max.
−
−
−
0.5
0.5
0.3
600
−
61.1
Unit
V
V
V
µA
µA
V
−
MHz
kΩ
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=10mA/1mA
VCE/IC=5V/1mA
VCE=10V, IE= −5mA, f=100MHz ∗
−
Rev.A
1/2