UMG9NTR Datasheet, PDF (1/8 Pages) Rohm – EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMG9 / UMG9N / FMG9A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ^Datasheet
Parameter
V_CC
I_C(MAX.)
R₁
R₂
Tr1 and Tr2
50V
100mA
10kW
10kW
lFeatures
1) Built-In Biasing Resistors, R₁ = R₂ = 10kW.
2) Two DTC114E chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
lOutline
EMT5
(5)
(4)
(1)
(2)
(3)
EMG9
(SC-107BB)
SMT5
(1)
(2)
(5)
(4)
(3)
FMG9A
(SC-74A)
UMT5
(4)
(3)
(2)
(1)
(5)
UMG9N
SOT-353 (SC-88A)
lInner circuit
EMG9 / UMG9N
IN
GND
IN
(3)
(2)
(1)
FMG9A
IN
GND
IN
(3)
(4)
(5)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(4)
OUT
(5)
OUT
(2)
OUT
(1)
OUT
lPackaging specifications
Part No.
Package
EMG9
UMG9N
FMG9A
EMT5
UMT5
SMT5
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T148
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180
8
8,000
180
8
3,000
180
8
3,000
Marking
G9
G9
G9
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2012.06 - Rev.B