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UMD9NTR Datasheet, PDF (1/4 Pages) Rohm – Digital Transistor (Dual Digital Transistors for Inverter Drive)
Digital Transistor (Dual Digital Transistors for Inverter Drive)
EMD9 / UMD9N / IMD9A
Features
1) DTA114Y and DTC114Y transistors are built-in a EMT
or UMT or SMT package.
Inner circuit
EMD9 / UMD9N
(3) (2) (1)
R1 R2
DTr2
DTr1
R2 R1
(4) (5) (6)
R1=10kΩ
R2=47kΩ
IMD9A
(4) (5) (6)
R1 R2
DTr2
DTr1
R2 R1
(3) (2) (1)
R1=10kΩ
R2=47kΩ
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMD9
EMT6
D9
T2R
8000
UMD9N
UMT6
D9
TR
3000
IMD9A
SMT6
D9
T108
3000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
VCC
50
V
VIN
−6 to +40
V
Output current
IO
70
mA
Collector current
Power dissipation EMD9, UMD9N
IMD9A
IC (Max.)
Pd
100
150(TOTAL)
300(TOTAL)
mA
mW ∗1
mW ∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 120mW per element must not be exceeded. PNP type negative symbols have been omitted.
∗2 200mW per element must not be exceeded. PNP type negative symbols have been omitted.
Dimensions (Unit : mm)
EMD9
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
Each lead has same dimensions
Abbreviated symbol : D9
UMD9N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol : D9
IMD9A
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol : D9
Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency ∗
Input resistance
Resistance ratio
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min.
−
1.4
−
−
−
68
−
7
3.7
PNP type negative symbols have been omitted.
∗ Characteristics of built-in transistor.
Typ.
−
−
0.1
−
−
−
250
10
4.7
Max.
0.3
−
0.3
0.88
0.5
−
−
13
5.7
Unit
V
V
mA
mA
−
MHz
kW
−
Conditions
VCC=5V , IO=100μA
VO=0.3V , IO=1mA
IO=5mA , II=0.25mA
VI=5V
VCC=50V , VI=0V
IO=5mA , VO=5V
VCE=10V , IE= −5mA , f=100MHz
−
−
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2010.01 - Rev.D