UM6J1N_09 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
UM6J1N
zStructure
Silicon P-channel MOSFET
zFeatures
1) Two RSU002P03 transistors in a single UMT package.
2) The MOSFET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
zApplications
Switching
zDimensions (Unit : mm)
UMT6
2.0
1.3
0.9
0.65
0.65
0.7
(5)
(6)
(4)
1pin mark
(1)
(3)
(2)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : J01
zPackaging specifications
Type
UM6J1N
Package
Code
Basic ordering unit (pieces)
Taping
TN
3000
zInner circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Tch
Tstg
Limits
−30
±20
±0.2
±0.4
150
120
150
−55 to +150
Unit
V
V
A
A
mW / TOTAL
mW / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
833
1042
Unit
°C/W / TOTAL
°C/W / ELEMENT
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2009.04 - Rev.A