TT8U2 Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch +SBD MOSFET

Data Sheet
1.5V Drive Pch +SBD MOSFET
TT8U2
 Structure
Silicon P-channel MOSFET / schottky barrier diode
 Features
1) Pch MOSFET and shottky barrier diode are put in TSST8 package.
2) High-speed switching and Low on-resistance.
3) Low voltage drive(1.5V).
4) Built in Low I_R shottky barierr daiode.
 Applications
Switching
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : U02
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
TT8U2
Taping
TCR
3000

 Absolute maximum ratings (Ta = 25C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP
I_S
I_SP^*1
Tch
P_D^*2
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(8)
(7)
(6)
(5)
Limits
20
10
2.4
9.6
0.8
9.6
150
1.0
Unit
V
V
A
A
A
A
C
W / ELEMENT
(1) ANODE
(2) ANODE
(3) SOURCE
(4) GATE
(5) DRAIN
(6) DRAIN
(7) CATHODE
(8) CATHODE
∗1
(1)
(2)
(3)
(4)
∗1 BODY DIODE
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
*1 60Hz / 1Cycle
*2 Mounted on a ceramic board
Symbol
V_RM
V_R
I_F
I_FSM*1
T_j
P_D*2
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
C
W / ELEMENT
<MOSFET and Di>
Parameter
Total power dissipation
Range of Storage temperature
* Mounted on a ceramic board
Symbol
P_D^*
Tstg
Limits
1.25
55 to 150
Unit
W / TOTAL
C
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2011.04 - Rev.A