TT8U1_09 Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch +SBD MOSFET

1.5V Drive Pch +SBD MOSFET
TT8U1
zStructure
Silicon P-channel MOSFET / schottky barrier diode
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
TT8U1
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Tch
PD ^∗2
Limits
−20
±10
±2.4
±9.6
−0.8
−9.6
150
1.0
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : U01
Each lead has same dimensions
zInner circuit
(8)
(7)
(6)
(5)
∗1
(1)
(2)
(3)
∗1 BODY DIODE
(1) Anode
(2) Anode
(3) Source
(4) Gate
(4)
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60HZ / 1Cycle
∗2 Mounted on a ceramic board
Symbol
VRM
VR
IF
IFSM ^∗1
Tj
PD ^∗2
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
°C
W / ELEMENT
<MOSFET and Di>
Parameter
Total power dissipation
Range of Storage temperature
∗ Mounted on a ceramic board
Symbol
PD ^∗
Tstg
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Limits
1.25
−55 to +150
Unit
W / TOTAL
°C
1/5
2009.06 - Rev.A