TT8M3 Datasheet, PDF (1/9 Pages) Rohm – 1.5V Drive Nch + Pch MOSFET

1.5V Drive Nch + Pch MOSFET
TT8M3
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low On-state resistance.
2) Low voltage drive(1.5V).
3) High power package.
Application
Switching
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :M03
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
TT8M3
Taping
TR
3000

Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
Tch
Tstg
20
20
10
10
2.5
2.4
10
9.6
0.8
0.8
10
9.6
1.25
1.0
150
55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source ^∗2
∗2
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
∗1
(7) Tr1 Drain
(1)
(2)
(3)
(4)
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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2010.07 - Rev.A