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TT8M2_09 Datasheet, PDF (1/9 Pages) Rohm – 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET | |||
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2.5V Drive Nch MOSFET
1.5V Drive Pch MOSFET
TT8M2
zStructure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
zFeatures
1) Low on-state resistance.
2) Low voltage drive.
3) High power package.
zApplication
Switching
(1) (2) (3) (4)
Abbreviated symbol : M02
Each lead has same dimensions
zInner circuit
(8)
(7)
(6)
(5)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
TT8M2
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<Tr1 : Nch>
Parameter
Drainâsource voltage
Symbol
VDSS
Gateâsource voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP â1
Source current
(Body diode)
â1 Pwâ¤10µs, Duty cycleâ¤1%
Continuous
Pulsed
IS
ISP â1
Limits
30
±12
±2.5
±10
0.8
10
â2
â2
â1
(1)
(2)
â1 ESD protection diode
â2 Body diode
(1) Tr1 Source
â1
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(3)
(4) (5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Unit
V
V
A
A
A
A
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
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