TT8M11 Datasheet, PDF (1/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET

Data Sheet
4V Drive Nch + Pch MOSFET
TT8M11
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Low voltage drive(4V drive).
3) Small surface mount package(TSST8).
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
 Application
Switching
Abbreviated symbol : M11
 Packaging specifications
Inner circuit
Package
Type _Code
Taping
TCR
(8)
(7) (6)
(5)
Basic ordering unit (pieces) 3000
TT8M11

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE
2 BODY DIODE
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
30
30
20
20
3
2.5
12
10
0.8
0.8
12
10
1.25
1.0
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
Channel temperature
Range of storage temperature
Tch
150
C
Tstg
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
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2011.09 - Rev.A