TT8M1 Datasheet, PDF (1/9 Pages) Rohm – 1.5V Drive Nch + Pch MOSFET

1.5V Drive Nch + Pch MOSFET
TT8M1
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
 Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :M01
 Application
Switching
 Packaging specifications
Package
Taping
Type Code
TR
Basic ordering unit (pieces) 3000
TT8M1

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
Tch
Tstg
20
20
10
10
2.5
2.5
10
10
0.8
0.8
10
10
1.25
1
150
55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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2010.08 - Rev.A