TT8K2_09 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
TT8K2
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
zFeatures
1) Low on-state resistance with fast switching.
2) Low voltage drive (2.5V).
zApplication
Switching
(1) (2) (3) (4)
Abbreviated symbol : K02
Each lead has same dimensions
zInner circuit
(8)
(7)
(6)
(5)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
TT8K2
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Symbol
VDSS
Gate−source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ^∗1
Source current
(Body diode)
Continuous
Pulsed
IS
ISP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Tch
Tstg
Limits
30
±12
±2.5
±10
0.8
10
1.25
1.0
150
−55 to +150
∗2
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1) Tr1 Source
∗1
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(3)
(4) ^{(5) Tr2 Drain}
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth (ch-a)^∗
Limits
100
125
Unit
°C / W / TOTAL
°C / W / ELEMENT
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2009.04 - Rev.A