TT8K11 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch + Nch MOSFET

Data Sheet
4V Drive Nch + Nch MOSFET
TT8K11
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low voltage drive(4V drive).
3) Small surface mount package(TSST8).
 Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
 Application
Switching
Abbreviated symbol : K11
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
TT8K11
Taping
TCR
3000

 Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
P_D ^*2
30
20
3
12
0.8
12
1.25
1.0
Tch
150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE
2 BODY DIODE
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
100
125
Unit
C / W/ TOTAL
C / W/ ELEMENT
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2011.08 - Rev.A