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TT8K1 Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Nch MOSFET | |||
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1.ï¼V Drive Nch MOSFET
TT8K1
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low On-resistance.
2) High power package.
3) 1.5V drive.
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : K01
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
TT8K1
Taping
TR
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
Tch
Tstg
20
ï±10
ï±2.5
ï±10
0.8
10
1.25
1.0
150
ï55 to +150
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
ï°C
ï°C
ï¬ Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
â2
â2
â1
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
100
125
Unit
°C / W /TOTAL
°C / W /ELEMENT
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.A
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