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TT8J2_09 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET | |||
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4V Drive Pch MOSFET
TT8J2
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (4V)
zApplications
Switching
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : J02
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
TT8J2
Taping
TR
3000
zInner circuit
(8)
(7)
(6)
(5)
â2
â2
â1
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
â2
PD
Channel temperature
Range of Storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 When mounted on a ceramic board
Tch
Tstg
Limits
â30
±20
±2.5
±10
â0.8
â10
1.25
1.0
150
â55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
â
Rth(ch-a)
Limits
100
125
Unit
°C / W / TOTAL
°C / W / ELEMENT
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âc 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.A
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