TT8J11 Datasheet, PDF (1/7 Pages) Rohm – 1.5V Drive Pch + Pch MOSFET

Data Sheet
1.5V Drive Pch + Pch MOSFET
TT8J11
 Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSST8
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive(1.5V drive).
(8) (7) (6) (5)
(1) (2) (3) (4)
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
TT8J11
Taping
TCR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
12
0 to 8
3.5
12
0.8
12
P_D *2
1.25
1
Tch
150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Abbreviated symbol : J11
Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
100
125
Unit
˚C / W /TOTAL
˚C / W /ELEMENT
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2011.05 - Rev.A