STZ56N Datasheet, PDF (1/2 Pages) Rohm – Zener Diode Array

Diodes
Zener Diode Array
STZ5.6N
!Applications
Constant voltage control
For the ESD measure of a signal line
!Features
1) Designed for mounting on small surface areas
2) High reliability
3) Composite type with two anode/cathode elements
!Construction
Silicon epitaxial planar
STZ5.6N
!External dimensions (Units : mm)
2.9±0.2
1.9±0.2
0.95 0.95
Week manufactured
0.4
+0.1
−0.05
1.1^{+−00..21}
0.8±0.1
0~0.1
0.15^{+−00..106}
ROHM : SMD3
EIAJ : SC-59
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P^∗
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55~+150
˚C
∗ Total of 2 elements
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Zener voltage
VZ
Reverse current
IR
Operating resistance
ZZ
Rising operating resistance
ZZK
Capacitance between terminals CT
Min.
5.31
−
−
−
−
Typ.
−
−
−
−
12
Max.
5.92
1.00
60
200
−
Unit
Conditions
V
IZ=5mA
µA VR=2.5V
Ω
IZ=5mA
Ω
IZ=0.5mA
pF f=1MHZ, VR=5V