SSTA56 Datasheet, PDF (1/2 Pages) Rohm – PNP General Purpose Transistor

Transistors
SSTA56 / MMSTA56 / MPSA56
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
!Features
1) BVCEO < −40V (IC = −1mA)
2) Complements the SSTA06 / MMSTA06 / MPSA06.
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SSTA56
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
MPSA56
TO-92
-
T93
3000
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−80
V
Collector-emitter voltage
VCEO
−80
V
Emitter-base voltage
VEBO
−4
V
Collector current
IC
−0.5
A
Collector power SSTA56, MMSTA56
dissipation
MPSA56
PC
0.2
0.625
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
!External dimensions (Units : mm)
SSTA56
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
0~0.1
0.2Min.
(3)
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MMSTA56
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1
+0.2
−0.1
0.8±0.1
0~0.1
ROHM : SMT3
EIAJ : SC-59
(3)
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MPSA56
4.8±0.2
3.7±0.2
ROHM : TO-92
EIAJ : SC-43
0.5±0.1
(1)
(2)
(3)
2.5
+0.3
−0.1
5
0.45±0.1
(1) Emitter
2.3 ^{(2) Base}
(3) Collector
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Symbol
BVCBO
BVCEO
ICBO
ICEO
VCE(sat)
VBE(on)
hFE
fT
Min.
−4
−80
-
-
-
-
100
100
50
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
−0.1
−1
−0.25
−1.2
-
-
-
Unit
V
V
µA
V
V
-
MHz
Conditions
IC = −100µA
IC = −1mA
VCB = −80V
VCE = −60V
IC/IB = −100mA/−10mA
VCE/IB = −1V/−100mA
VCE = −1V , IC = −10mA
VCE = −1V , IC = −100mA
VCE = −1V , IE = 100mA , f = 100MHz