SSTA06_07 Datasheet, PDF (1/4 Pages) Rohm – NPN General Purpose Transistor

Transistors
SSTA06 / MMSTA06
NPN General Purpose Transistor
SSTA06 / MMSTA06
zFeatures
1) BVCEO < 80V ( IC=1mA)
2) Complements the SSTA56 / MMSTA56.
zPackage, marking and packaging specifications
Part No.
Packaging type
Mark
Code
Basic ordering unit (pieces)
SSTA06
SST3
R1G
T116
3000
MMSTA06
SMT3
R1G
T146
3000
zDimensions (Unit : mm)
SSTA06
ROHM : SST3
MMSTA06
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
80
4
0.5
0.2
0.35
150
−55 to +150
Unit
V
V
V
A
W
W^∗
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
VCE(sat)
VBE(ON)
hFE
fT
Min. Typ. Max. Unit
Conditions
80
−
−
V IC=100µA
80
−
−
V IC=1mA
4
−
−
V IE=100µA
−
−
0.1
VCB=80V
µA
−
−
1
VCE=60V
−
−
0.25
V IC/IB=100mA/10mA
−
−
1.2
V VCE/IB=1V/100mA
100
−
−
VCE=1V, IC=10mA
−
100
−
−
VCE=1V, IC=100mA
100
−
−
MHz VCE=2V, IE= −10mA, f=100MHz
(1) Emitter
(2) Base
(3) Collector
Rev.B
1/3