SST4401 Datasheet, PDF (1/4 Pages) Rohm – NPN Medium Power Transistor (Switching)

Transistors
SST4401 / MMST4401 / 2N4401
NPN Medium Power Transistor
(Switching)
SST4401 / MMST4401 / 2N4401
zFeatures
1) BVCEO>40V (IC=1mA)
2) Complements the SST4403 / MMST4403 / PN4403.
zPackage, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
−
T93
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
SST4401
Collector power ^MMST4401
dissipation
SST4401
PC
MMST4401
2N4401
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7⁺ 5⁺ 0.6mm CERAMIC SUBSTRATE
Limits
60
40
6
0.6
0.2
0.35
0.625
150
−55 to +150
Unit
V
V
V
A
W
W
˚C
˚C
zExternal dimensions (Unit : mm)
SST4401
ROHM : SST3
MMST4401
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
0 to 0.1
(3)
All terminals have the same
dimensions
0.4
+0.1
−0.05
0.15
+0.1
−0.06
0.2Min.
(1) Emitter
(2) Base
(3) Collector
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1+_−00..12
0.8±0.1
0 to 0.1
ROHM : SMT3
EIAJ : SC-59
2N4401
(3)
All terminals have the same
dimensions
0.4_−^+00..015
0.15_−^+00..016
4.8±0.2
3.7±0.2
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
0.5±0.1.
(1) (2) (3) _{2.5 −}+00..31
5
0.45±0.1
(1) Emitter
(2) Base
(3) Collector
2.3
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
−
−
−
−
−
−
20
40
80
100
40
250
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
0.1
0.1
0.4
0.75
0.95
1.2
−
−
−
300
−
−
6.5
30
15
20
225
30
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=35V
VEB=5V
IC/IB=150mA/15mA
IC/IB=500mA/50mA
IC/IB=150mA/15mA
IC/IB=500mA/50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IE= −20mA, f=100MHz
VCB=10V, f=100kHz
VEB=0.5V, f=100kHz
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA
Rev.A
1/3