SP8M2 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch + Pch MOSFET

Transistors
4V Drive Nch+Pch MOS FET
SP8M2
SP8M2
zStructure
Silicon N-channel MOS FET /
Silicon P-channel MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small surface mount package (SOP8).
zApplications
Switching
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8)
(5)
(1)
(4)
1pin mark
1.27
0.2
Each lead has same dimensions
zPackage specifications
Type
SP8M2
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zInner circuit
(8)
(7) (6)
(5)
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
Tr1 : N-ch Tr2 : P-ch
30
−30
20
−20
±3.5
±3.5
±14
±14
1.6
−1.6
14
−14
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
°C
°C
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