SP8J5FRA Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Pch+Pch MOS FET

Transistors
4V Drive Pch+Pch MOS FET
SP8J5 FRA
SP8JS5PF8RJA5
AEC-Q101 Qualified
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (25m: at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8)
(5)
(1)
(4)
1pin mark
1.27
0.2
Each lead has same dimensions
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SP8J5 FRA
Taping
TB
2500
zInner circuit
(8)
(7)
(6)
(5)
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
zAbsolute maximum ratings (Ta=25qC)
<It is the same ratings for Tr1 and Tr2.>
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−30
V
Gate-source voltage
VGSS
±20
V
Drain current
Continuous
ID
±7.0
A
Pulsed
IDP ^∗1
±28
A
Source current
Continuous
IS
−1.6
A
(Body diode)
Pulsed
ISP ^∗1
−28
A
Total power dissipation
PD ^∗2
2.0
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
62.5
Unit
°C / W
Rev.A
1/4