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SIR-563ST3F_07 Datasheet, PDF (1/4 Pages) Rohm – Infrared light emitting diode, top view type
Sensors
SIR-563ST3F
Infrared light emitting diode, top view type
SIR-563ST3F
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
compact optical control equipment.
zApplications
Optical control equipment
Light source for remote control devices
zFeatures
1) High efficiency, high output PO=11.0mW (IF=50mA).
2) Wide radiation angle θ1/2=15deg.
3) Emission spectrum well suited to silicon detectors.
(λP=940nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
zDimensions (Unit : mm)
φ5.0±0.2
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
4−0.6
2− 0.5
2
1
(2.5)
1 Anode
2 Cathode
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
Symbol
Limits
Unit
IF
100
mA
VR
5.0
V
PD
160
mW
IFP∗
0.5
A
Topr
−25 to +85
°C
Tstg
−40 to +85
°C
Rev.A
1/3