SIR-341ST3F_10 Datasheet, PDF (1/3 Pages) Rohm – Infrared light emitting diode, top view type

Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Features
1) Compact (3.1mm).
2) High efficiency, high output PO8.4mW (IF50mA).
3) Wide radiation angle  1/216deg.
4) Peak wavelength well suited to silicon detectors (P940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
Dimensions (Unit : mm)
φ3.8±0.3
φ3.5
φ3.1±0.2
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
4−0.6
2− 0.5
2
1
(2.5)
1 Anode
2 Cathode
Absolute maximum ratings (Ta = 25C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
Symbol
Limits
Unit
IF
75
mA
VR
5
V
PD
100
mW
IFP^∗
500
mA
Topr
−25 to +85
°C
Tstg
−40 to +85
°C
Electrical and optical characteristics (Ta = 25C)
Parameter
Symbol Min. Typ.
Optical output
PO
−
8.4
Emitting strength
IE
5.6 18.1
Forward voltage
VF
−
1.3
Reverse current
IR
−
−
Peak light emitting wavelength
λP
− 940
Spectral line half width
Δλ
−
40
Half-viewing angle
θ1 / 2
− ±16
Response time
tr·tf
−
1.0
Cut-off frequency
fC
−
1.0
Max. Unit
−
mW IF=50mA
− mW/sr IF=50mA
1.5
V IF=50mA
10
μA VR=3V
−
nm IF=50mA
−
nm IF=50mA
−
deg IF=50mA
−
μs IF=50mA
− MHz IF=50mA
Conditions
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2010.06 - Rev.B