SIM-22ST_10 Datasheet, PDF (1/3 Pages) Rohm – Infrared light emitting diode, side-view type

Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens.
Applications
Light source for sensors
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(P = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Dimensions (Unit : mm)
4.1
4.6 ± 0.1
Notes:
1. Tolerances are ± 0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
2-C0.7
0.15
R0.75
R0.5
2−0.65
2−0.45
1
2
(2.54)
R0.5
0.40
0.64
1 Cathode
2 Anode
Absolute maximum ratings (Ta=25C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width = 0.1ms, duty ratio 1%
Symbol
Limits
Unit
IF
50
mA
VR
5
V
PD
80
mW
IFP^∗
0.5
A
Topr
−25 to +85
°C
Tstg
−30 to +100
°C
Electrical and optical characteristics (Ta=25C)
Parameter
Symbol Min. Typ.
Emitting strength
IE
−
0.8
Emitting strength
IE
0.48 1.3
Forward voltage
VF
−
1.3
Reverse current
IR
−
−
Peak light emitting wavelength
λP
−
950
Spectral line half width
Δλ
−
40
Half-viewing angle
θ1/2
−
±30
Response time
tr tf
−
1.0
Cut-off frequency
fc
∗ According to our measurement procedures.
−
1.0
Max. Unit
− mW/sr IF=10mA
1.94 mA IF=10mA∗
1.6
V IF=50mA
10
μA VR=5V
−
nm IF=10mA
−
nm IF=20mA
−
deg IF=50mA
−
μs IF=50mA
− MHz IF=50mA
Conditions
www.rohm.com
1/2
○^c 2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B