SH8M4_09 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Nch+Pch MOSFET

4V Drive Nch+Pch MOSFET
SH8M4
Structure
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8M4
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
Nchannel Pchannel
Drain-source voltage
VDSS
30
−30
V
Gate-source voltage
VGSS
±20
±20
V
Drain current
Continuous
ID
±9.0
±7.0
A
Pulsed
IDP ^∗1
±36
±28
A
Source current
Continuous
IS
1.6
−1.6
A
(Body diode)
Pulsed
ISP ^∗1
36
−28
A
Total power dissipation
PD ^∗2
2
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Inner circuit
(8)
(7) (6)
(5) (8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)^∗
Limits
62.5
Unit
°C / W
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2009.12 - Rev.A