English
Language : 

SH8M41 Datasheet, PDF (1/9 Pages) Rohm – 4V Drive Nch + Pch MOSFET
4V Drive Nch + Pch MOSFET
SH8M41
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
 Dimensions (Unit : mm)
SOP8
(8) (7)
(6)
(2)
(3)
 Application
Switching
 Packaging specifications
 Inner circuit
Type
SH8M41
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
Tch
Tstg
80
80
20
20
3.4
2.6
13.6 10.4
1.6
1.6
13.6
10.4
2
150
55 to +150
V
V
A
A
A
A
W / TOTAL
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol Limits
Rth (ch-a)* 62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/8
2010.07 - Rev.A