SH8M14 Datasheet, PDF (1/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET

Data Sheet
4V Drive Nch + Pch MOSFET
SH8M14
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
 Dimensions (Unit : mm)
SOP8
(8)
(5)
(1)
(4)
 Application
Switching
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
SH8M14
Taping
TB
2500

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
Tch
Tstg
30
30
20
20
9
7
36
28
1.6
1.6
36
28
2.0
1.4
150
55 to 150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.06 - Rev.A