SCS240AE2 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS240AE2
SiC Schottky Barrier Diode
V_R
650V
I_F
20A/40A*
Q_C
31nC
*(Per leg / Both legs)
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Outline
TO-247
Datasheet
Inner circuit
(1) ^{(2) (3)}
(1) Anode
(2) Cathode
(3) Anode
(1) (2) (3)
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
30
C
SCS240AE2
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current^*7
Surge no repetitive forward current^*7
Repetitive peak forward current^*7
Total power disspation^*7
Junction temperature
V_RM
650
V
V_R
650
V
I_F
20/40*¹
A
71/140*²
A
I_FSM
260/530*³
A
56/110*⁴
A
I_FRM
76/154*⁵
A
P_D
130/270*⁶
W
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
*1 Tc=128°C/Tc=129°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C *7 Per leg / Both legs
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2017.07 - Rev.E