SCS230KE2_17 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS230KE2
SiC Schottky Barrier Diode
V_R
1200V
I_F
15A/30A*
Q_C
51nC
*(Per leg / Both legs)
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Outline
TO-247
Datasheet
Inner circuit
(1) ^{(2) (3)}
(1) Anode
(2) Cathode
(3) Anode
(1) (2) (3)
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Packing code
C
Marking
SCS230KE2
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current^*7
Surge no repetitive forward current^*7
Repetitive peak forward current^*7
Total power disspation^*7
V_RM
1200
V
V_R
1200
V
I_F
15/30*¹
A
65/130*²
A
I_FSM
240/480*³
A
49/98*⁴
A
I_FRM
62/120*⁵
A
P_D
180/360*⁶
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
*1 Tc=139°C/Tc=139°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C *7 Per leg / Both legs
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2017.06 - Rev.C