SCS230AE2HR_17 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS230AE2HR
SiC Schottky Barrier Diode
V_R
650V
I_F
15A/30A*
Q_C
23nC
*(Per leg / Both legs)
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
Construction
Silicon carbide epitaxial planer Schottky Diode
AEC-Q101 Qualified
TO-247
Datasheet
Inner circuit
(1) ^{(2) (3)}
(1) Anode
(2) Cathode
(3) Anode
(1) (2) (3)
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
30
C
SCS230AE2
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current^*7
Surge no repetitive forward current^*7
Repetitive peak forward current^*7
Total power disspation^*7
Junction temperature
V_RM
650
V
V_R
650
V
I_F
15/30*¹
A
55/110*²
A
I_FSM
200/410*³
A
43/87*⁴
A
I_FRM
61/124*⁵
A
P_D
110/230*⁶
W
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
*1 Tc=130°C/Tc=130°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C *7 Per leg / Both legs
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2017.06 - Rev.C