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| SCS220AM Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS220AM
SiC Schottky Barrier Diode
VR
650V
IF
20A
QC
31nC
ï¬Outline
TO-220FM
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ï¬Inner circuit
Datasheet
(1) (2)
(1) Cathode
(2) Anode
ï¬Construction
Silicon carbide epitaxial planer type
(1)
(2)
ï¬Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
50
C
SCS220AM
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM
650
V
VR
650
V
IF
20*1
A
71*2
A
IFSM
260*3
A
56*4
A
IFRM
39*5
A
PD
40*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
ï55 to ï«175
°C
*1 Tc=97°C DUTY CYCLE=50%,square *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ïs square,
Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2017.06 - Rev.D
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