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SCS220AJ Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode
SCS220AJ
SiC Schottky Barrier Diode
VR
650V
IF
20A
QC
31nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
lOutline
LPT(L)
<TO-263AB>
Data Sheet
(1)
(2)
(3)
(4)
lInner circuit
(1)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
lPackaging specifications
Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm)
Type
Basic ordering unit (pcs)
24
1,000
Taping code
TLL
Marking
SCS220AJ
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM
650
V
VR
650
V
IF
20*1
A
71*2
A
IFSM
260*3
A
56*4
A
IFRM
67*5
A
PD
100*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=110°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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2014.12 - Rev.A