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| SCS220AE_17 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS220AE
SiC Schottky Barrier Diode
VR
650V
IF
20A
QC
31nC
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ï¬Construction
Silicon carbide epitaxial planer Shottoky Diode
ï¬Outline
TO-247
Datasheet
ï¬Inner circuit
(1) (2) (3)
(1) N/C
(2) Cathode
(3) Anode
(1) (2) (3)
ï¬Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
30
C
SCS220AE
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
VR
650
V
Continuous forward current
IF
20*1
A
71*2
A
Surge no repetitive forward current
IFSM
260*3
A
56*4
A
Repetitive peak forward current
IFRM
76*5
A
Total power disspation
PD
130*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
ï55 to ï«175
°C
*1 Tc=128°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ïs square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2017.06 - Rev.C
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