SCS220AE2HR Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS220AE2HR
SiC Schottky Barrier Diode
V_R
650V
I_F
10A/20A*
Q_C
15nC
*(Per leg / Both legs)
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer schottky diode
lAEC-Q101 Qualified
TO-247
Data Sheet
lInner circuit
(1) ^{(2) (3)}
(1) Anode
(2) Cathode
(3) Anode
(1) (2) (3)
lPackaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Taping code
C
Marking
SCS220AE2
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current^*7
Surge no repetitive forward current^*7
Repetitive peak forward current^*7
Total power disspation^*7
V_RM
650
V
V_R
650
V
I_F
10/20*¹
A
40/80*²
A
I_FSM
150/300*³
A
31/63*⁴
A
I_FRM
42/85*⁵
A
P_D
83/160*⁶
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=137°C/Tc=137°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C *7 Per leg / Both legs
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2014.05 - Rev.A