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SCS215AM Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode
SCS215AM
SiC Schottky Barrier Diode
VR
650V
IF
15A
QC
23nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lOutline
TO-220FM
lInner circuit
Data Sheet
(1) (2)
(1) Cathode
(2) Anode
lConstruction
Silicon carbide epitaxial planer Shottoky Diode
(1)
(2)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
C
SCS215AM
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
VR
650
V
Continuous forward current
IF
15*1
A
55*2
A
Surge no repetitive forward current
IFSM
200*3
A
43*4
A
Repetitive peak forward current
IFRM
34*5
A
Total power disspation
PD
39*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=55°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C
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2014.01 - Rev.A
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