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| SCS212AJ_17 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS212AJ
SiC Schottky Barrier Diode
VR
650V
IF
12A
QC
18nC
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ï¬Construction
Silicon carbide epitaxial planer type
ï¬Outline
LPT(L)
<TO-263AB>
Datasheet
(1)
(2)
(3)
(4)
ï¬Inner circuit
(1)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
ï¬Packaging specifications
Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm)
Type
Basic ordering unit (pcs)
24
1,000
Packing code
TLL
Marking
SCS212AJ
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VR
650
V
IF
12*1
A
45*2
A
IFSM
170*3
A
36*4
A
IFRM
47*5
A
PD
88*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
ï55 to ï«175
°C
*1 Tc=130°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ïs square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2017.06 - Rev.C
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