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| SCS212AJ Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS212AJ
SiC Schottky Barrier Diode
VR
650V
IF
12A
QC
18nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
lOutline
LPT(L)
<TO-263AB>
Data Sheet
(1)
(2)
(3)
(4)
lInner circuit
(1)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
lPackaging specifications
Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm)
Type
Basic ordering unit (pcs)
24
1,000
Taping code
TLL
Marking
SCS212AJ
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VR
650
V
IF
12*1
A
45*2
A
IFSM
170*3
A
36*4
A
IFRM
47*5
A
PD
88*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=130°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.12 - Rev.A
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