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| SCS212AGHR Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS212AGHR
SiC Schottky Barrier Diode
VR
650V
IF
12A
QC
18nC
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ï¬Construction
Silicon carbide epitaxial planer Schottky diode
ï¬Outline
TO-220AC
(1)
Datasheet
ï¬Inner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2)
(3)
ï¬Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
C
SCS212AG
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM
650
V
VR
650
V
IF
12*1
A
45*2
A
IFSM
170*3
A
36*4
A
IFRM
49*5
A
PD
93*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
ï55 to ï«175
°C
*1 Tc=134°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ïs square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.01 - Rev.A
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