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| SCS210KGHR_17 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS210KGHR
SiC Schottky Barrier Diode
VR
1200V
IF
10A
QC
34nC
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ï¬Construction
Silicon carbide epitaxial planer schottky diode
ï¬AEC-Q101 Qualified
TO-220AC
(1)
Datasheet
ï¬Inner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2)
(3)
ï¬Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
50
C
SCS210KG
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM
1200
V
VR
1200
V
IF
10*1
A
45*2
A
IFSM
190*3
A
33*4
A
IFRM
46*5
A
PD
150*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
ï55 to ï«175
°C
*1 Tc=146°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10ïs square,Tj=25°C
*4 Pw=8.3ms sinusoidal, Tj=150°C, *5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2017.06 - Rev.C
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