SCS210KE2 Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS210KE2
SiC Schottky Barrier Diode
V_R
1200V
I_F
5A/10A*
Q_C
17nC
*(Per leg / Both legs)
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Outline
TO-247
Datasheet
Inner circuit
(1) ^{(2) (3)}
(1) Anode
(2) Cathode
(3) Anode
(1) (2) (3)
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Packing code
C
Marking
SCS210KE2
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current^*7
Surge no repetitive forward current^*7
Repetitive peak forward current^*7
Total power disspation^*7
Junction temperature
V_RM
1200
V
V_R
1200
V
I_F
5/10*¹
A
23/46*²
A
I_FSM
87/170*³
A
18/36*⁴
A
I_FRM
24/49*⁵
A
P_D
80/170*⁶
W
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
*1 Tc=148°C/Tc=150°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C *7 Per leg / Both legs
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2017.06 - Rev.C