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| SCS210AGHR Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS210AGHR
SiC Schottky Barrier Diode
VR
650V
IF
10A
QC
15nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
(2) (3)
lInner circuit
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2)
(3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
C
SCS210AG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM
650
V
VR
650
V
IF
10*1
A
40*2
A
IFSM
150*3
A
31*4
A
IFRM
41*5
A
PD
78*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=133°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.05 - Rev.A
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